Method of forming multilayer interconnection structure,...

Details Method of forming multilayer interconnection structure,... Method of forming multilayer interconnection structure,...

2006-04-11

2006-04-11

Dang, Phuc T. (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S672000

Reexamination Certificate

active

07026236

ABSTRACT:
Method of forming a multilayer interconnection structure of the invention that is a method of forming a multilayer interconnection structure in which a first conductive layer and a second conductive layer are stacked via an insulating layer, and the first conductive layer and the second conductive layer are connected via through holes formed in the insulating layer. The method includes the steps of forming a first conductive layer on a substrate, forming the insulating layer with the through holes on the first conductive layer, filling conductive material into the through holes using a droplet discharge device to form a contact conductive material, and forming the second conductive layer such that it is connected to the contact conductive material.

REFERENCES:
patent: 5493152 (1996-02-01), Chang
patent: 6614112 (2003-09-01), Uchida
patent: A 4-291240 (1992-10-01), None

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