Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-07-18
2006-07-18
Wilczewski, Mary (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S413000
Reexamination Certificate
active
07078777
ABSTRACT:
A gate electrode structure in a semiconductor device has a doped polysilicon (DOPOS) film, a tungsten silicide film, a tungsten silicide nitride film, a tungsten nitride film and a tungsten film consecutively as viewed from the substrate. The tungsten silicide nitride film is formed between the tungsten silicide film and the tungsten nitride film by a plurality of heat treatments. The tungsten silicide nitride film has a small thickness of 2 to 5 nm and has a lower interface resistance for achieving a low-resistance gate electrode, suited for a higher-speed operation of the semiconductor device.
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Elpida Memory Inc.
Hayes & Soloway P.C.
Thomas Toniae M.
Wilczewski Mary
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