Temperature-dependent DRAM self-refresh circuit

Details Temperature-dependent DRAM self-refresh circuit Temperature-dependent DRAM self-refresh circuit

2006-04-25

2006-04-25

Phung, Anh (Department: 2824)

Static information storage and retrieval

Read/write circuit

Data refresh

C365S211000, C365S226000

Reexamination Certificate

active

07035157

ABSTRACT:
A device comprising a temperature-dependent self refresh circuit for a memory device is provided where the self refresh circuit includes: a temperature sensor circuit for providing an output that reflects an operation temperature; means for switching the temperature sensor circuit to a low power state during a self refresh operation; an encoder for encoding temperature data from said output; and a programmable oscillator responsive to the encoded data to provide a temperature-dependent refresh signal for the self refresh operation.

REFERENCES:
patent: 4393477 (1983-07-01), Murotani
patent: 5278796 (1994-01-01), Tallinghast et al.
patent: 6281760 (2001-08-01), Koelling et al.
patent: 6438057 (2002-08-01), Ruckerbauer
patent: 6560164 (2003-05-01), Kawai et al.
patent: 6597614 (2003-07-01), Nam et al.

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