Active solid-state devices (e.g. – transistors – solid-state diode – Encapsulated – With specified encapsulant
Reexamination Certificate
2006-07-04
2006-07-04
Parekh, Nitin (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Encapsulated
With specified encapsulant
C257S707000, C257S783000, C257S787000, C257SE23121
Reexamination Certificate
active
07071577
ABSTRACT:
In a semiconductor device of a structure comprising a thin semiconductor element bonded to a reinforcing plate via a bonding layer of a predetermined thickness, resin binder used for forming the bonding layer contains fillers including a first filler, which has a diameter generally equal to a target thickness of the bonding layer to be adjusted to a value within a range of proper thickness (from 25 μm to 200 μm). This can maintain the bonding layer within the range of proper thickness when the semiconductor element is bonded to the plate, and ensure on-board mounting reliability of the semiconductor device.
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Sakai Tadahiko
Wada Yoshiyuki
Matshushita Electric Industrial Co., Ltd.
Parekh Nitin
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