Integrated, tunable capacitance device

Details Integrated, tunable capacitance device Integrated, tunable capacitance device

2006-03-28

2006-03-28

Whitehead, Jr., Carl (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Voltage variable capacitance device

Reexamination Certificate

active

07019384

ABSTRACT:
An integrated, tunable capacitance device includes a semiconductor region, which is, preferably, N-doped, formed in a semiconductor body, having an insulating thick oxide region, which areally adjoins the main side of the semiconductor body, and having a thin oxide region, which, likewise, adjoins the main side and is disposed above the semiconductor region and also has a smaller layer thickness than the thick oxide region. A gate electrode is provided on the thin oxide region and terminal regions are provided in the semiconductor region. The capacitance described has a larger tuning range compared with transistor varactors. The integrated, tunable capacitance can be used, for example, in LC oscillators of integrated VCOs.

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