Method of production of semiconductor package

Details Method of production of semiconductor package Method of production of semiconductor package

2006-04-25

2006-04-25

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S637000, C438S639000, C438S672000, C438S386000

Reexamination Certificate

active

07033934

ABSTRACT:
A semiconductor package of superior high frequency characteristics enabling easy mounting of a large-sized capacitor and thereby enabling fluctuation of the power supply voltage to be suppressed and enabling a reduction of the inductance of the wiring portion connecting the capacitor and a connection terminal, that is, a semiconductor package mounting a capacitor for suppressing fluctuation of a power supply voltage, wherein the capacitor is comprised of, in an attachment hole passing through the board in the thickness direction, a conductor wire to be connected to a connection terminal of a semiconductor chip at one end, a high dielectric constant material covering the conductor wire at a predetermined thickness, and a conductor layer arranged between the outer circumference of the high dielectric constant material and the inner wall of the attachment hole, provided as a coaxial structure having the conductor wire at its center, and a method of production of the same.

REFERENCES:
patent: 6072690 (2000-06-01), Farooq et al.
patent: 6314013 (2001-11-01), Ahn et al.
patent: 6605551 (2003-08-01), Wermer et al.
patent: 6717071 (2004-04-01), Chang et al.
patent: 2002/0017399 (2002-02-01), Chang et al.
patent: 2004/0149490 (2004-08-01), Chang et al.
patent: A-5-167258 (1993-07-01), None
patent: A-10-163-632 (1998-06-01), None
patent: A-2001-352166 (2001-12-01), None
English Translation Of JP 05-167258.

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