Reduced aspect ratio digit line contact process flow used...

Details Reduced aspect ratio digit line contact process flow used... Reduced aspect ratio digit line contact process flow used...

2006-03-21

2006-03-21

Wojciechowicz, Edward (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S307000, C257S308000

Reexamination Certificate

active

07015528

ABSTRACT:
A method used during the formation of a semiconductor device comprises forming a first portion of a digit line contact plug before forming storage capacitors. Subsequent to forming storage capacitors, a second portion of the digit line plug is formed to contact the first portion, then the digit line runner is formed to contact the second plug portion. A structure resulting from the process is also described.

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