Semiconductor structure implementing low-K dielectric...

Details Semiconductor structure implementing low-K dielectric... Semiconductor structure implementing low-K dielectric...

2006-01-10

2006-01-10

Vu, Hung (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S522000, C257S773000

Reexamination Certificate

active

06984892

ABSTRACT:
A semiconductor device is provided. The semiconductor device includes a substrate having transistor devices and a plurality of copper interconnect metallization lines and conductive vias. The plurality of copper interconnect metallization lines and conductive vias are defined in each of a plurality of interconnect levels of the semiconductor device such that the plurality of copper interconnect metallization lines and conductive vias are isolated from each other by an air dielectric. The semiconductor device further includes a plurality of supporting stubs each of which is configured to form a supporting column that extends through the plurality of interconnect levels of the semiconductor device.

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Zielinski et al., “Damascene Integration of Copper and Ultra-Low-k Xerogel for High Performance Interconnects”, p. 31.7.1 to 31.7.3, IEDM 1997, Texas Instruments, Dallas, TX.

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