Charge detecting device

Details Charge detecting device Charge detecting device

2006-04-25

2006-04-25

Smith, Zandra V. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S239000, C257S386000, C257S462000, C257S463000

Reexamination Certificate

active

07034347

ABSTRACT:
There is provided a charge detecting device that can convert an accumulated charge to a voltage at a low voltage and a high efficiency, and has a large dynamic range of an output voltage and satisfactory linearity of a conversion efficiency. The charge detecting device includes a charge accumulating portion including a low concentration N-type (N−) layer108formed in a P-type well101and a high concentration N-type (N+) layer formed between the N− layer and a principal surface. The N+ layer is connected to an input terminal of an amplifying transistor of an output circuit, and after a reverse bias is applied to the N+ layer during discharging of the accumulated charge, the entire N− layer is depleted at least until a saturated charge is accumulated.

REFERENCES:
patent: 5977576 (1999-11-01), Hamasaki
patent: 6084259 (2000-07-01), Kwon et al.
patent: 2001/0054726 (2001-12-01), Abe
patent: 9-232555 (1997-09-01), None
patent: 2000-82839 (2000-03-01), None
patent: 2000-91550 (2000-03-01), None

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