Semiconductor device formed in semiconductor layer arranged...

Details Semiconductor device formed in semiconductor layer arranged... Semiconductor device formed in semiconductor layer arranged...

2006-03-28

2006-03-28

Ngô, Ngân V. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S347000

Reexamination Certificate

active

07019365

ABSTRACT:
A semiconductor device according to an aspect of the present invention comprises a first semiconductor layer and a plurality of second semiconductor layers. The first semiconductor layer is formed in a first region of a semiconductor substrate with one of an insulating film and a cavity interposed between the semiconductor substrate and the first semiconductor layer. The plurality of second semiconductor layers is formed in second regions of the semiconductor substrate.

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