Static information storage and retrieval – Read/write circuit – Testing
Reexamination Certificate
2006-03-21
2006-03-21
Phung, Anh (Department: 2824)
Static information storage and retrieval
Read/write circuit
Testing
C365S233100
Reexamination Certificate
active
07016244
ABSTRACT:
For testing or for characterizing output drivers of output circuits of high-speed semiconductor memory devices under conditions close to an application, scan elements are provided at the inputs of the output circuits. The scan elements in each case have a register function and are cascaded to form a scan chain. Via the scan chain, test data signals are applied to the inputs of the output circuits whilst bypassing a memory cell array of the semiconductor memory devices. The characterization of data signals of the high-speed semiconductor memory devices that are output by the output circuits requires only a test memory controller not connected to the data signal terminals and a passive load simulation of the application memory controller.
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patent: 6560147 (2003-05-01), Yoshiyama
patent: 2003/0058165 (2003-03-01), Whetsel, Jr.
Sommer Stefan
Spirkl Wolfgang
Infineon - Technologies AG
Phung Anh
Slater & Matsil L.L.P.
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