Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-09-19
2006-09-19
Hu, Shouxiang (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S303000, C257S306000, C257SE21651
Reexamination Certificate
active
07109543
ABSTRACT:
A semiconductor device and a method for fabricating the same. The device comprises a silicon substrate having a conductive well; a trench formed in the conductive well; a plate electrode formed on the sidewall of the trench; a capacitor insulating film and a storage node electrode; a first storage node connector formed on the storage node electrode; an insulating film formed on the first storage node connector; a silicon layer formed on the entire structure; word lines formed on the silicon layer; source and drain regions formed in the silicon layer; a contact hole, formed in the silicon layer and the insulating film, such that the first storage node connector and the source region are exposed; and a second storage node connector, formed in the contact hole, such that the source region and the first storage node connector are connected to each other.
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Dongbuanam Semiconductor Inc.
Hu Shouxiang
Keefer Timothy J.
Seyfarth Shaw LLP
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