Method of fabricating a p-type ohmic electrode in gallium...

Details Method of fabricating a p-type ohmic electrode in gallium... Method of fabricating a p-type ohmic electrode in gallium...

2006-07-25

2006-07-25

Nguyen, Tuan H. (Department: 2813)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S605000

Reexamination Certificate

active

07081401

ABSTRACT:
A p-type ohmic electrode in a gallium nitride based(GaN based) optical device and a fabrication method thereof. The p-type ohmic electrode in a GaN based optical device is fabricated using a rutile structure transition metal layer, such as an Ru, Ir or Os layer, or an oxide layer thereof, or using a double layer comprised of an Ru layer as a base layer and an Ni layer, an ITO layer or an AuO layer on the Ru layer. Thus, the p-type ohmic electrode is good in light transmittance and is thermally stable while having low contact resistance with the p-GaN layer.

REFERENCES:
patent: 6100174 (2000-08-01), Takatani
patent: 6319808 (2001-11-01), Ho et al.
patent: 6326294 (2001-12-01), Jang et al.
patent: P1997-0077764 (1997-12-01), None
patent: P1999-0088218 (1999-12-01), None

Affiliated with

Also associated with

Rating

Method of fabricating a p-type ohmic electrode in gallium... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating a p-type ohmic electrode in gallium..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating a p-type ohmic electrode in gallium... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3557498