Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-09-05
2006-09-05
Owens, Douglas W. (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S335000
Reexamination Certificate
active
07102194
ABSTRACT:
A high voltage LDMOS transistor according to the present invention includes at least one P-field block in the extended drain region of the N-well. The P-field blocks form junction-fields in the N-well for equalizing the capacitance of parasitic capacitors between the drain region and the source region and fully deplete the drift region before breakdown occurs. A higher breakdown voltage is therefore achieved and the N-well having a higher doping density is thus allowed. The source region and P-field blocks enclose the drain region, which makes the LDMOS transistor self-isolated.
REFERENCES:
patent: 6593621 (2003-07-01), Tsuchiko et al.
patent: 2001/0053581 (2001-12-01), Mosher et al.
Chien Tuo-Hsin
Huang Chih-Feng
Lin Jenn-yu G.
Yang Ta-yung
J.C. Patents
Owens Douglas W.
System General Corp.
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