Ferroelectric memory device with a conductive polymer layer...

Details Ferroelectric memory device with a conductive polymer layer... Ferroelectric memory device with a conductive polymer layer...

2006-04-11

2006-04-11

Wojciechowicz, Edward (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S040000, C257S296000

Reexamination Certificate

active

07026670

ABSTRACT:
A ferroelectric memory device and a method of formation are disclosed. In one particular embodiment, a ferroelectric memory device comprises a first electrode layer formed on a substrate, a ferroelectric polymer layer formed on substantial portion of a first electrode layer, a thin layer of conductive ferroelectric polymer formed on a substantial portion of the ferroelectric polymer layer, where the ferroelectric polymer may be made conductive by doping with conductive nano-particles, and a second electrode layer formed on at least a portion of the carbon doped ferroelectric polymer layer.

REFERENCES:
patent: 2003/0224535 (2003-12-01), Andideh et al.

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