Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-03-21
2006-03-21
Eckert, George (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S368000, C257S410000, C257S411000
Reexamination Certificate
active
07015536
ABSTRACT:
A charge trapping device, and a method of forming the same is disclosed. Charge traps are optimally distributed through a trapping region based on controlling various conventional processing operations, such as an implant, an anneal, an insulator film deposition, and the like. In some embodiments, FETs can be configured to include a negative differential resistance (NDR) characteristic when they utilize a particular charge trap energy and distribution.
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Bever Hoffman & Harms LLP
Budd Paul
Eckert George
Harms Jeanette S.
Progressant Technologies, Inc.
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