Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-07-25
2006-07-25
Munson, Gene M. (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S347000, C257S382000, C257S413000, C257S622000, C257S900000
Reexamination Certificate
active
07081652
ABSTRACT:
A manufacturing method of a semiconductor device having a side wall insulating film, comprising; forming a gate insulating film on a semiconductor substrate, forming a gate electrode on the gate insulating film, forming a first side wall insulating film on a side surface of the gate electrode, forming a projecting portion on a first upper surface of the semiconductor substrate adjacent to the first side wall insulating film, forming a first diffusion layer by introducing impurities to the projecting portion formed on the semiconductor substrate, removing the first side wall insulating film so as to expose a second upper surface of the semiconductor substrate located below the first side wall insulating film, a width of the second upper surface exposed being a X, forming a second diffusion layer by introducing impurities to the second upper surface of the semiconductor substrate, and forming a second side wall insulating film on the side surface of the gate electrode and the second upper surface of the semiconductor substrate, a width of the second side wall insulating film being a Y, wherein the Y is 0.5X or more and the X or less (0.5X≦Y≦X).
REFERENCES:
patent: 4419810 (1983-12-01), Riseman
patent: 5071780 (1991-12-01), Tsai
patent: 5319232 (1994-06-01), Pfiester
patent: 6624034 (2003-09-01), Abe et al.
patent: 6677646 (2004-01-01), Ieong et al.
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