Semiconductor memory device capable of detecting repair...

Static information storage and retrieval – Read/write circuit – Bad bit

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C365S201000

Reexamination Certificate

active

07106640

ABSTRACT:
There is provided a semiconductor memory device capable of detecting a repaired address in a test mode. The semiconductor memory device includes: a plurality of unit address detectors for comparing 1-bit address signal with a stored 1-bit repair address signal to output a repair signal, and for buffering the stored repair address signal and outputting the buffered repair address signal as the repair signal in a test mode; a redundancy address detector for combining the plurality of repair signals from the unit address detectors and outputting a detection signal for detecting whether a current input address is a redundancy address; and a redundancy flag signal generator for generating a redundancy flag signal in response to the detection signal and transferring the redundancy flag signal to a data output path.

REFERENCES:
patent: 6285620 (2001-09-01), Ho et al.
patent: 6404683 (2002-06-01), Yumoto
patent: 1020020030183 (2002-04-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor memory device capable of detecting repair... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor memory device capable of detecting repair..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device capable of detecting repair... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3550541

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.