Phase change resistor cell and nonvolatile memory device...

Details Phase change resistor cell and nonvolatile memory device... Phase change resistor cell and nonvolatile memory device...

2006-05-02

2006-05-02

Zarabian, Amir (Department: 2827)

Static information storage and retrieval

Systems using particular element

Flip-flop

C365S145000, C365S189011, C365S148000

Reexamination Certificate

active

07038938

ABSTRACT:
A nonvolatile memory device features a phase change resistor cell. More specifically, a phase change resistor and a hybrid switch which does not require an additional gate control signal are used to embody rapid nonvolatile SRAM characteristics. In the nonvolatile memory device, a cell plate is connected to a top electrode of a nonvolatile resistor memory device whose resistance state is changed by current values, and the hybrid switch is connected between a flip-flop and a bottom electrode of the nonvolatile resistor memory device, thereby improving characteristics of the rapid nonvolatile memory.

REFERENCES:
patent: 6574129 (2003-06-01), Tran
patent: 6847543 (2005-01-01), Toyoda et al.
patent: 6937507 (2005-08-01), Chen
patent: 6944050 (2005-09-01), Kang et al.

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