Data processing: measuring – calibrating – or testing – Measurement system – Performance or efficiency evaluation
Reexamination Certificate
2006-01-31
2006-01-31
Tsai, Carol S. W. (Department: 2857)
Data processing: measuring, calibrating, or testing
Measurement system
Performance or efficiency evaluation
C702S030000, C702S031000, C702S032000, C430S005000
Reexamination Certificate
active
06993455
ABSTRACT:
In the method, which is to be carried out on a computer system, firstly design data of a semiconductor substrate are read in and, on the basis thereof, a mask image is generated in the form of a data structure with contact holes and with auxiliary structures on the computer system. Afterwards, contact hole biases are determined by means of an optical proximity correction method and the relevant contact holes are corrected on the basis of these contact hole biases. By means of subsequent imaging simulation of the mask image on the semiconductor substrate, undesired imaging auxiliary structures and contact holes deviating from specified tolerances on the semiconductor substrate are detected and corrected. During the imaging simulation of the mask image, a mask bias is employed in order to compensate for three-dimensional mask effects. A real mask can be produced on the basis of the mask image thus determined.
REFERENCES:
patent: 4101782 (1978-07-01), Seliger
patent: 5340700 (1994-08-01), Chen et al.
patent: 5895741 (1999-04-01), Hasegawa et al.
patent: 6004699 (1999-12-01), Yasuzato et al.
patent: 6020107 (2000-02-01), Niiyama et al.
patent: 6081659 (2000-06-01), Garza et al.
patent: 6236447 (2001-05-01), Yamada et al.
patent: 6261724 (2001-07-01), Bula et al.
patent: 6610448 (2003-08-01), Sato et al.
patent: 6757645 (2004-06-01), Chang et al.
patent: 6873720 (2005-03-01), Cai et al.
patent: 6883159 (2005-04-01), Schenker et al.
patent: 2001/0055720 (2001-12-01), Sato et al.
patent: 2002/0015900 (2002-02-01), Petersen
patent: 2002/0018964 (2002-02-01), Jerominek
patent: 2003/0022074 (2003-01-01), Nolscher
patent: 2003/0091911 (2003-05-01), Noelscher
patent: WO 00/67074 (2000-11-01), None
Alfred K. Wong et al.; “Rigorous Three-Dimensional Time-Domain Finite-Difference Electromagnetic Simulation for Photolithographic Applications”; IEEE Transactions on Semiconductor Manfacturing, Nov. 1995.
Andreas Erdmann et al.; “3D Electromagnetic Field Simulation for Low-K1Lithography”; Microlithography World, Pennwell Publishing, Feb. 2001.
A.K. Wong et al.; “Mask Topography Effects in Projection Printing of Phase-Shifting Masks”; IEEE Transactions on Electron Devices, Jun. 1994.
Wilhelm Maurer et al.; “Proximity Effects of Alternating Phase shift Masks”; SPIE, 1999.
Olivier Toublan et al.; Phase and Transmission Errors Aware OPC Solution for PSM: Feasibility Demonstration; Mentor Graphics, Baccus, 2000.
K. Adam et al.; “Simplified Models for Edge Transitions in Rigorous Mask Modeling”: University of California at Berkeley; SPIE, 2001.
Koehle Roderick
Pufall Reinhard
Baker & Botts
Infineon - Technologies AG
Tsai Carol S. W.
LandOfFree
Method for determining the construction of a mask for the... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for determining the construction of a mask for the..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for determining the construction of a mask for the... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3545246