Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-01-03
2006-01-03
Pham, Hoai (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S500000, C257S510000
Reexamination Certificate
active
06982459
ABSTRACT:
A vertical type MOS field effect transistor has a super junction structure between a source electrode and an N+-type drain region. The super junction structure is constituted by a plurality of P-type single crystal silicon regions and a plurality of N-type single crystal silicon regions. Each of the plurality of P-type single crystal silicon regions and each of the plurality of N-type single crystal silicon regions are arrayed alternately. The super junction has two parts, that is, a cell forming region where a MOS structure is disposed and a peripheral region located at a periphery of the cell forming region. The source electrode contacts one of the P-type single crystal silicon regions in the peripheral region while disposed away from an end portion of the peripheral region that is located at an outermost in the peripheral region.
REFERENCES:
patent: 4754310 (1988-06-01), Coe
patent: 5216275 (1993-06-01), Chen
patent: 5378914 (1995-01-01), Ohzu et al.
patent: 5438215 (1995-08-01), Tihanyi
patent: 5519236 (1996-05-01), Ozaki
patent: 5773849 (1998-06-01), Harris et al.
patent: 5895939 (1999-04-01), Ueno
patent: 5963807 (1999-10-01), Ueno
patent: 5981996 (1999-11-01), Fujishima
patent: 6040600 (2000-03-01), Uenishi et al.
patent: 6081009 (2000-06-01), Neilson
patent: 6174773 (2001-01-01), Fujishima
patent: 6479876 (2002-11-01), Deboy et al.
patent: 6621132 (2003-09-01), Onishi et al.
patent: 6700175 (2004-03-01), Kodama et al.
patent: 2001/0028083 (2001-10-01), Onishi et al.
patent: 2001/0052601 (2001-12-01), Onishi et al
patent: 2002/0040994 (2002-04-01), Nitta et al.
patent: 2002/0074596 (2002-06-01), Suzuki et al.
patent: 2002/0088990 (2002-07-01), Iwamoto et al.
patent: 2004/0016959 (2004-01-01), Yamaguchi et al.
patent: A-3-155167 (1991-07-01), None
patent: A-8-316480 (1996-11-01), None
patent: A-9-266311 (1997-10-01), None
patent: A-2000-260984 (2000-09-01), None
patent: A-2000-269518 (2000-09-01), None
patent: A-2000-277726 (2000-10-01), None
patent: A-2001-111050 (2001-04-01), None
patent: A-2001-144292 (2001-05-01), None
patent: A-2001-244461 (2001-09-01), None
patent: A-2001-332726 (2001-11-01), None
Notice of Rejection/Communication from Japanese Patent Office in Japanese application No. 2000-383440 which is a counterpart Japanese application of U.S. Appl. No. 10/634,819, (English translation attached) mailed Jan. 27, 2004. Cited Reference: JP-A-2000-269518 was disclosed on Nov. 17, 2003.
Suzuki Takashi
Tokura Norihito
Uesugi Tsutomu
Denso Corporation
Ha Nathan W.
Pham Hoai
Posz Law Group , PLC
LandOfFree
Semiconductor device having a vertical type semiconductor... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device having a vertical type semiconductor..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having a vertical type semiconductor... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3545229