Nitride semiconductor substrate and its production method

Details Nitride semiconductor substrate and its production method Nitride semiconductor substrate and its production method

2006-07-11

2006-07-11

Ngô, Ngân V. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

C257S613000, C257SE29100

Reexamination Certificate

active

07075111

ABSTRACT:
A nitride semiconductor substrate having a diameter of 10 mm or more, which has a single-layer structure composed of a nitride semiconductor layer having a basic composition represented by AlxGa1−xN (0≦x≦1), or a multi-layer structure comprising the nitride semiconductor layer, the mass density of the nitride semiconductor layer being 98% or more of a theoretical mass density ρ (x) represented by the following general formula (1):ρ⁡(x)=4⁢(Mx+MN)3⁢ax2⁢cx⁢Na,(1)wherein ax=aGaN+(aAlN−aGaN)x, wherein aGaNrepresents an a-axis length of GaN, and aAlNrepresents an a-axis length of AlN; cx=cGaN+(cAlN−cGaN)x, wherein cGaNrepresents a c-axis length of GaN, and CAlNrepresents a c-axis length of AlN; Mx=MGa+(MAl−MGa)x, wherein MGarepresents the atomic weight of Ga, and MAlrepresents the atomic weight of Al; MNrepresents the atomic weight of nitrogen; and Narepresents Avogadro's number.

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