Method of forming a metal silicide layer on...

Details Method of forming a metal silicide layer on... Method of forming a metal silicide layer on...

2006-07-04

2006-07-04

Nguyen, Tuan H. (Department: 2813)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S683000

Reexamination Certificate

active

07071102

ABSTRACT:
A process is described for creating a uniformly thick layer of titanium, cobalt, or nickel silicide over a layer of polysilicon that has features or a non-planar topography. A dual layer of metal is deposited onto patterned polysilicon such that the first layer covers the bottoms and tops of the non-planar topography and the second layer covers the sidewalls and tops of the non-planar topography. By heating the metal, etching away any un-reacted metal, and heating the result a second time, a metal silicide layer of uniform thickness, reduced stress and reduced resistivity is formed.

REFERENCES:
patent: 5913145 (1999-06-01), Lu et al.
patent: 5998294 (1999-12-01), Clayton et al.
patent: 6524952 (2003-02-01), Srinivas et al.
patent: 6528421 (2003-03-01), Yang
patent: 2003/0022487 (2003-01-01), Yoon et al.
patent: 2003/0054637 (2003-03-01), Yang

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