Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2006-07-11

2006-07-11

Tran, Minhloan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S347000, C257S377000, C257S384000, C257S412000, C257S413000, C257S455000, C438S488000, C438S655000

Reexamination Certificate

active

07075158

ABSTRACT:
A semiconductor device can be manufactured which has a low resistance, and device characteristics of which do not vary. The semiconductor device includes a silicon layer, a gate dielectric film formed on the silicon layer, a gate electrode formed on the gate dielectric film and including a nitrided metal silicide layer which is partially crystallized, and source and drain regions formed in a surface region of the silicon layer at both sides of the gate electrode.

REFERENCES:
patent: 8-139092 (1996-05-01), None
patent: 2001-284466 (2001-10-01), None
S.B. Samavedam et al., “Metal Gate MOSFETs With HfO2Gate Dielectric,” 2002 Symposium on VLSI Technology Digest of Technical Papers (2002), pp. 24-25.
D.G. Park et al., “Robust Ternary Metal Gate Electrodes for Dual Gate CMOS Devices,” IEDM (2001), pp. 671-674.
Notification of Reason for Rejection issued by the Japanese Patent Office, mailed May 9, 2006, for Japanese Patent Application No. 2003-169700, and English-language translation thereof.

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