Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-07-11
2006-07-11
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
Reexamination Certificate
active
07074719
ABSTRACT:
A method to deposit nucleation problem free ruthenium by ALD. The nucleation problem free, relatively smooth ruthenium ALD film is deposited by the use of plasma-enhanced ALD of ruthenium underlay for consequent thermal ruthenium ALD layer. In addition, oxygen or nitrogen plasma treatments of SiO2or other dielectrics leads to uniform ALD ruthenium deposition. The method has application as a direct plating layer for a copper interconnect or metal gate structure for advanced CMOS devices.
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Kim Hyungiun
Rossnagel Stephen M.
Aker David
Lebentritt Michael
Morris Daniel P.
Stevenson Andre′ C.
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