Solid-state image sensor

Details Solid-state image sensor Solid-state image sensor

2006-03-21

2006-03-21

Pham, Hoai (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S462000

Reexamination Certificate

active

07015522

ABSTRACT:
A solid-state image sensor of the present invention includes a semiconductor substrate1having a plurality of pixels, and each of the pixels comprises an impurity layer a photoelectric converting layer, a read out region, and a gate electrode. The impurity layer includes an adjoining portion adjacent to a portion of the substrate directly beneath the gate electrode The adjoining portion includes sub-portions aligned along a width direction of a gate that is orthogonal to a transfer direction of a signal charge and a thickness direction of the substrate. An impurity density in the sub-portion2aincluding a center of the adjoining portion is lower than that in the sub-portions.

REFERENCES:
patent: 5977576 (1999-11-01), Hamasaki
patent: 03-201478 (1991-09-01), None
patent: 2000-286405 (2000-10-01), None
patent: 2003-188367 (2003-07-01), None

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