Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Reexamination Certificate
2006-03-28
2006-03-28
Lee, John R. (Department: 2881)
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
C250S492100, C250S492210, C250S492230, C250S492300
Reexamination Certificate
active
07019313
ABSTRACT:
Methods and devices are disclosed for evaluating image performance in a charged-particle-beam (CPB) microlithography apparatus. In the disclosed method, multiple knife-edge reference marks are defined by a plate positioned at an image plane. The reference marks are illuminated by measurement beamlets formed by an upstream subfield. The beamlets are scanned over the reference marks to produce a series of beam-current transmissions. Each beam-current transmission corresponds to a single beamlet being scanned over a corresponding reference mark. The beam-current transmissions are exclusive of one another. The series of transmissions is then detected and analyzed. The knife-edge reference marks may be positioned on the plate so that the relative distance between the reference marks and the corresponding beamlets progressively increases for each successively scanned mark. A dummy beam also may be defined on the upstream subfield. The reference marks of the plate may be apertures or constructed of a charged-particle-reflecting material.
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Lee John R.
Souw Bernard E.
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