Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2006-01-31

2006-01-31

Coleman, W. David (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

Reexamination Certificate

active

06992357

ABSTRACT:
A semiconductor device comprises an n-type MIS transistor comprising a first gate insulating film and a first gate electrode including an MSixfilm formed on the first gate insulating film, where M represents a metal element selected from tungsten and molybdenum and x is greater than 1, i.e., x>1; and a p-type MIS transistor comprising a second gate insulating film and a second gate electrode including an MSiyfilm formed on the second gate insulating film, where y is not less than 0 and less than 1, i.e., 0≦y<1.

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Ranade et al., “Work Function Engineering of Molybdenum Gate Electrodes by Nitrogen Implantation” Electrochemical and Solid-State Letters, 4(11) G85-87 (2001), Electro-Chemical Society, Aug. 21, 2001.
U.S. Appl. No. 09/962,883, filed Sep. 25, 2001, Matsuo.

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