Manufacture of CMOS devices

Details Manufacture of CMOS devices Manufacture of CMOS devices

Filed on

1994-05-13

Date issued

1996-06-11

Examiner

Wojciechowicz, Edward

Patent Class

Active solid-state devices (e.g., transistors, solid-state diode

SubClass

Field effect device

SubSubClass

Having insulated electrode

Other Related Categories

257375, 257376, 257398, 257506, 437 15, 437 29, 437 57, 437 63, 437235, H01L 2976, H01L 2104

Type

Patent

Status

active

Patent number

055258239

Description

ABSTRACT:
A method for forming field oxide regions on an integrated circuit device includes the steps of providing doped regions for formation of active devices. After the doped regions have been formed, a thick field oxide layer is grown over the entire surface of the device. Field oxide regions are then defined using masking and anisotropic etching steps which provide approximately vertical sidewalls for the field oxide regions, and which do not result in the formation of bird's beaks. Since the active regions are defined prior to formation of the field oxide regions, the active regions extend under the field oxide regions and do not give rise to edge effects.

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