Method of providing multiple logical bits per memory cell

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics

Reexamination Certificate

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C257S528000, C257S537000

Reexamination Certificate

active

07019381

ABSTRACT:
A semiconductor substrate is provided over which electrically conductive columns are formed along with electrically conductive rows crossing over the electrically conductive columns. A plurality of memory components are formed each having a resistance value corresponding to multiple logical bits and non-volatile memory cells are each formed by connecting a memory component between an electrically conductive row and an electrically conductive column.

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