Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device
Reexamination Certificate
2006-07-25
2006-07-25
Whitehead, Jr., Carl (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
C257S061000, C257S403000, C257S902000
Reexamination Certificate
active
07081646
ABSTRACT:
There are disclosed TFTs that have excellent characteristics and can be fabricated with a high yield. The TFTs are fabricated, using an active layer crystallized by making use of nickel. Gate electrodes are comprising tantalum. Phosphorus is introduced into source/drain regions. Then, a heat treatment is performed to getter nickel element in the active layer and to drive it into the source/drain regions. At the same time, the source/drain regions can be annealed out. The gate electrodes of tantalum can withstand this heat treatment.
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Jr. Carl Whitehead
Mitchell James M.
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
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