Metamorphic long wavelength high-speed photodiode

Details Metamorphic long wavelength high-speed photodiode Metamorphic long wavelength high-speed photodiode

2006-03-07

2006-03-07

Zarabian, Amir (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

With lattice constant mismatch

C257S191000, C257S018000, C257S028000, C438S037000

Reexamination Certificate

active

07009224

ABSTRACT:
A metamorphic device including a substrate structure upon which a semiconductor device can be formed. In the metamorphic device, a buffer layer matching a substrate lattice constant is formed at normal growth temperatures and a thin grading layer which grades past the desired lattice constant is configured at a low temperature. A reverse grading layer grades the lattice constant back to match a desired lattice constant. Thereafter, a thick layer is formed thereon, based on the desired lattice constant. Annealing can then occur to isolate dislocated material in at least the grading layer and the reverse grading layer. Thereon a strained layer superlattice is created upon which a high-speed photodiode or other semiconductor device can be formed.

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