MOS transistor with asymmetrical source/drain extensions

Details MOS transistor with asymmetrical source/drain extensions MOS transistor with asymmetrical source/drain extensions

2006-03-28

2006-03-28

Thomas, Tom (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S339000, C257S356000, C257S376000

Reexamination Certificate

active

07019363

ABSTRACT:
A method of fabricating an integrated circuit utilizes symmetric source/drain junctions. The process can be utilized for P-channel or N-channel metal oxide field semiconductor effect transistors (MOSFETS). The drain extension is deeper than the source extension. The source extension is more conductive than the drain extension. The transistor has reduced short channel effects and strong drive current and yet is reliable.

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