Silicon crystallization method

Details Silicon crystallization method Silicon crystallization method

2006-07-04

2006-07-04

Vu, David (Department: 2818)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

C257S059000

Reexamination Certificate

active

07071082

ABSTRACT:
Sequential lateral solidification (SLS) crystallization of amorphous silicon using a mask having striped light transmitting portions. An amorphous silicon bearing substrate is located in an SLS apparatus. The amorphous silicon film is functionally divided into a driving region (for driving devices) and a display region (for TFT switches). Part of the driving region is crystallized by a laser that passes through the mask. The mask is then moved relative to the substrate by a translation distance that is less than half the width of the light transmitting portions. Thereafter, subsequent crystallizations are performed to crystallize the driving region. Then, part of the display region is crystallized by a laser that passes through the mask. The mask is then moved relative to the substrate by a translation distance that is more than half the width of the light transmitting portions. Thereafter, subsequent crystallizations are performed to crystallize the display region.

REFERENCES:
patent: 5696388 (1997-12-01), Funada et al.
patent: 5969377 (1999-10-01), Seo
patent: 6020244 (2000-02-01), Thompson et al.
patent: 6489222 (2002-12-01), Yoshimoto

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