Gate structure and method of manufacture

Details Gate structure and method of manufacture Gate structure and method of manufacture

2006-01-31

2006-01-31

Chen, Kin-Chan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S700000, C438S706000

Reexamination Certificate

active

06992010

ABSTRACT:
A method of forming a gate structure. A gate oxide layer, a polysilicon layer, a metallic layer and an insulation layer are sequentially formed over a substrate. Using a definite height level to be an etching end point, the insulation layer, the metallic layer and the polysilicon layer are patterned to form a stack structure. A barrier layer is formed over the stack structure. An etching operation is conducted to form a first spacer covering a portion of each sidewall of the stack structure. The etching operation is continued to remove the polysilicon layer outside the first spacer until the gate oxide layer is exposed. A portion of the exposed polysilicon layer on the sidewalls of the stack structure is removed so that a recess structure is formed. A re-oxidation process is conducted to form a re-oxidation layer within the recess structure. A second spacer is formed over the first spacer and the re-oxidation layer.

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patent: 6143611 (2000-11-01), Gilton et al.
patent: 6190996 (2001-02-01), Mouli et al.
patent: 6838365 (2005-01-01), Gilton et al.

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