High-voltage CMOS-compatible capacitors

Details High-voltage CMOS-compatible capacitors High-voltage CMOS-compatible capacitors

2006-07-04

2006-07-04

Flynn, Nathan J. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S068000, C257S071000, C257SE21646

Reexamination Certificate

active

07071507

ABSTRACT:
A high-voltage stacked capacitor includes a first capacitor and a second capacitor. Each capacitor includes a first plate comprising a first semiconductive body and a second plate comprising a floating electrode. The first and second semiconductive bodies are electrically isolated from each other. The floating electrode includes an intercapacitor node configured to self-adjust to a value less than a working voltage impressed on the stacked capacitor.

REFERENCES:
patent: 4914546 (1990-04-01), Alter
patent: 5187637 (1993-02-01), Embree
patent: 5301150 (1994-04-01), Sullivan et al.
patent: 5354701 (1994-10-01), Chao
patent: 5587869 (1996-12-01), Azumi et al.
patent: 5831692 (1998-11-01), Lee
patent: 5908443 (1999-06-01), Brewer et al.
patent: 5926064 (1999-07-01), Hariton
patent: 6137153 (2000-10-01), Le et al.
patent: 6242989 (2001-06-01), Barber et al.
patent: 6262469 (2001-07-01), Le et al.
patent: 6563691 (2003-05-01), Kijima et al.
patent: 6646499 (2003-11-01), Tiebout
patent: 6664909 (2003-12-01), Hyde et al.
U.S. Appl. No. 10/143,557 Hyde et al., (assignee Impinj), filed May 9, 2002.

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