Amplifiers – With semiconductor amplifying device – Including frequency-responsive means in the signal...
Reexamination Certificate
2006-04-25
2006-04-25
Nguyen, Patricia (Department: 2817)
Amplifiers
With semiconductor amplifying device
Including frequency-responsive means in the signal...
C330S296000, C330S306000
Reexamination Certificate
active
07034620
ABSTRACT:
An RF power amplifier having reduced memory effects is disclosed. This is achieved by a novel design of the DC supply feed network to achieve low impedance across video frequencies, whilst maintaining the correct RF output matching. One or more transmission zeros are provided in the bias circuit transfer function, which are positioned in the video bandwidth so as to provide low and relatively constant impedance across the video bandwidth. Also, a parallel DC feed line may be employed to reduce impedance across the video bandwidth. The reduction in memory effects allows improved performance of predistortion linearization techniques and an implementation in a feed forward amplifier employing predistortion linearization is also disclosed.
REFERENCES:
patent: 4717884 (1988-01-01), Mitzlaff
patent: 4719430 (1988-01-01), Cole
patent: 4760350 (1988-07-01), Ayasli
patent: 5159287 (1992-10-01), Furutani et al.
patent: 5177452 (1993-01-01), Honjo
patent: 5206608 (1993-04-01), Torres
patent: 5250912 (1993-10-01), Fujita
patent: 5272450 (1993-12-01), Wisherd
patent: 5329249 (1994-07-01), Cripps
patent: 5357213 (1994-10-01), Michel et al.
patent: 5361038 (1994-11-01), Allen et al.
patent: 5406226 (1995-04-01), Cioffi et al.
patent: 5568087 (1996-10-01), Gatti
patent: 5592122 (1997-01-01), Masahiro et al.
patent: 5606286 (1997-02-01), Bains
patent: 5617061 (1997-04-01), Fukuchi
patent: 5760632 (1998-06-01), Kawakami et al.
patent: 5783965 (1998-07-01), Iwatsuki et al.
patent: 5999056 (1999-12-01), Fong
patent: 6081160 (2000-06-01), Custer et al.
patent: 6107877 (2000-08-01), Miguelez et al.
patent: 6121841 (2000-09-01), Sakuno
patent: 6122532 (2000-09-01), Taylor
patent: 6130589 (2000-10-01), Yamaguchi et al.
patent: 6140858 (2000-10-01), Dumont
patent: 6281755 (2001-08-01), Feld et al.
patent: 6307436 (2001-10-01), Hau
patent: 6313705 (2001-11-01), Dening et al.
patent: 6342810 (2002-01-01), Wright et al.
patent: 6346853 (2002-02-01), Kangaslahti et al.
patent: 6353360 (2002-03-01), Hau et al.
patent: 6369656 (2002-04-01), Dening et al.
patent: 6373331 (2002-04-01), Smiley et al.
patent: 6437649 (2002-08-01), Miyashita et al.
patent: 6828862 (2004-12-01), Barak
patent: 2001/0013809 (2001-08-01), Fujiwara et al.
patent: 2001/0040483 (2001-11-01), Dening et al.
patent: 2002/0014922 (2002-02-01), Leich et al.
patent: 2002/0017954 (2002-02-01), Hau et al.
patent: 2002/0033735 (2002-03-01), Hasegawa et al.
patent: 2002/0125955 (2002-09-01), Leighton et al.
patent: 2002/0135427 (2002-09-01), Yokota
Feedforward—An Alternative Approach to Amplifier Linearization, T.J. Bennett, R.F. Clements,The Radio and Electronic Engineer,vol. 44, No. 5, May 1974.
Measurement Technique for Characterizing Memory Effects in RF Power Amplifiers, J. Vuolevi, T. Rahkonen, J. Mamminen, IEE Transactions in Microwave Theory and Techniques, vol. 49, No. 8, Aug. 2001.
Measurement and Simulation of Memory Effects in Predistortion Linearizers, W. Bosch, G. Gatti, IEE Transactions in Microwave Theory and Techniques, vol. 37, No. 12, Dec. 2001.
Khanifar Ahmad
Maslennikov Nikolai
Spiller Gareth
Myers Dawes Andras & Sherman LLP.
Nguyen Patricia
Powerwave Technologies Inc.
LandOfFree
RF power amplifier employing bias circuit topologies for... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with RF power amplifier employing bias circuit topologies for..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and RF power amplifier employing bias circuit topologies for... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3525788