Manufacturing method of semiconductor device

Details Manufacturing method of semiconductor device Manufacturing method of semiconductor device

2005-11-08

2005-11-08

Smith, Matthew (Department: 2825)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S230000, C438S303000, C438S424000

Reexamination Certificate

active

06962862

ABSTRACT:
A method of manufacturing a semiconductor device having an isolation region, a trench formed on a semiconductor substrate and an insulating film buried within the trench; includes: forming a gate electrode in an active region adjacent to the isolation region; applying an ion implantation onto the substrate to form a first dopant diffusion region; forming a first and a second insulating film, on the entire surface of the substrate; performing an etch back, to form a first sidewall of the second insulating film on a lateral face of the gate electrode; etching the first insulating film to form a second sidewall of the first insulating film on the lateral face of; making another ion implantation to form a second dopant diffusion region; forming an interlayer insulating film; and forming a contact hole to reach the second dopant diffusion region.

REFERENCES:
patent: 4855247 (1989-08-01), Ma et al.
patent: 5714413 (1998-02-01), Brigham et al.
patent: 5783475 (1998-07-01), Ramaswami
patent: 5851890 (1998-12-01), Tsai et al.
patent: 5972760 (1999-10-01), Ju
patent: 6018180 (2000-01-01), Cheek et al.
patent: 6074922 (2000-06-01), Wang et al.
patent: 6127711 (2000-10-01), Ono
patent: 6133105 (2000-10-01), Chen et al.
patent: 6140192 (2000-10-01), Huang et al.
patent: 6153483 (2000-11-01), Yeh et al.
patent: 6156593 (2000-12-01), Peng et al.
patent: 6165857 (2000-12-01), Yeh et al.
patent: 6200840 (2001-03-01), Chen et al.
patent: 6235606 (2001-05-01), Huang et al.
patent: 6255152 (2001-07-01), Chen
patent: 6291351 (2001-09-01), Li et al.
patent: 6291354 (2001-09-01), Hsiao et al.
patent: 6297112 (2001-10-01), Lin et al.
patent: 6316304 (2001-11-01), Pradeep et al.
patent: 6329225 (2001-12-01), Rodder
patent: 6391732 (2002-05-01), Gupta et al.
patent: 6432784 (2002-08-01), Yu
patent: 6440875 (2002-08-01), Chan et al.
patent: 6-97190 (1994-04-01), None
patent: 7-142726 (1995-06-01), None
patent: 2001-1765 (2001-01-01), None
patent: 2001-66327 (2001-07-01), None
English Translation of KR2001001765 (Pub. Date: Jan. 5, 2001).

Affiliated with

Also associated with

Rating

Manufacturing method of semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Manufacturing method of semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Manufacturing method of semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3521577