Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Reexamination Certificate
2005-11-22
2005-11-22
Thompson, Craig A. (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With heterojunction
C257S088000, C257S094000, C257S101000, C257S103000
Reexamination Certificate
active
06967353
ABSTRACT:
A semiconductor light emitting device includes a crystal layer formed on a substrate, the crystal layer having a tilt crystal plane tilted from the principal plane of the substrate, and a first conductive type layer, an active layer, and a second conductive type layer, which are formed on the crystal layer in such a manner as to extend within planes parallel to the tilt crystal plane, wherein the device has a shape formed by removing the apex and its vicinity of the stacked layer structure formed on the substrate. Such a semiconductor light emitting device is excellent in luminous efficiency even if the device has a three-dimensional device structure. The present invention also provides a method of fabricating the above semiconductor light emitting device.
REFERENCES:
patent: 4526624 (1985-07-01), Tombrello et al.
patent: 5438241 (1995-08-01), Zavracky et al.
patent: 5834327 (1998-11-01), Yamazaki et al.
patent: 5989944 (1999-11-01), Yoon
patent: 6030849 (2000-02-01), Hasegawa et al.
patent: 6110813 (2000-08-01), Ota et al.
patent: 6111277 (2000-08-01), Ikeda
patent: 6204079 (2001-03-01), Aspar et al.
patent: 6252261 (2001-06-01), Usui et al.
patent: 6274889 (2001-08-01), Ota et al.
patent: 6277711 (2001-08-01), Wu
patent: 6316357 (2001-11-01), Lin et al.
patent: 6403451 (2002-06-01), Linthicum et al.
patent: 6576571 (2003-06-01), Biwa et al.
patent: 6583445 (2003-06-01), Reedy et al.
patent: 6586778 (2003-07-01), Linthicum et al.
patent: 6610144 (2003-08-01), Mishra et al.
patent: 6613610 (2003-09-01), Iwafuchi et al.
patent: RE38466 (2004-03-01), Inoue et al.
patent: 2003/0107047 (2003-06-01), Okuyama et al.
patent: 2004/0051110 (2004-03-01), Oohata
Biwa Goshi
Morita Etsuo
Okuyama Hiroyuki
Suzuki Jun
Depke Robert J.
Doty Heather
Thompson Craig A.
Trexler, Bushnell, Giangiorgi, Blackstone & Marr
LandOfFree
Semiconductor light emitting device and fabrication method... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor light emitting device and fabrication method..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor light emitting device and fabrication method... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3521296