Method for forming a semiconductor device with a hard mask...

Details Method for forming a semiconductor device with a hard mask... Method for forming a semiconductor device with a hard mask...

2005-08-02

2005-08-02

Smoot, Stephen W. (Department: 2813)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S763000, C438S791000, C438S792000

Reexamination Certificate

active

06924229

ABSTRACT:
A method for forming a semiconductor device having improved characteristics and reliability by forming a hard mask layer on a bit line to prevent degradation of characteristics of the device in a self-alignment contact process of a storage electrode is disclosed. The hard mask layer utilizes over-hang formed at the upper portion of the bit line so as to provide sufficient protection for the bit line in the subsequent etching processes.

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patent: 6436783 (2002-08-01), Ono et al.
patent: 6458692 (2002-10-01), Kim
patent: 2001/0046737 (2001-11-01), Ahn et al.

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