Tunneling magnetoresistive random access memory with a...

Details Tunneling magnetoresistive random access memory with a... Tunneling magnetoresistive random access memory with a...

2005-12-06

2005-12-06

Tran, Andrew Q. (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetic thin film

C365S171000, C365S158000

Reexamination Certificate

active

06972992

ABSTRACT:
A magnetic random access memory includes a magnetoresistive element which has a recording layer, a fixed layer, and a tunnel barrier layer arranged between the recording layer and the fixed layer, the fixed layer comprising an anti-ferromagnetic layer, a first ferromagnetic layer which is in contact with the anti-ferromagnetic layer, a second ferromagnetic layer which is magnetically coupled with the first ferromagnetic layer by first magnetic coupling, a third ferromagnetic layer which is magnetically coupled with the second ferromagnetic layer by second magnetic coupling, a first nonmagnetic layer which is formed between the first and second ferromagnetic layers, and a second nonmagnetic layer which is formed between the second and third ferromagnetic layers and has a thickness different from a thickness of the first nonmagnetic layer.

REFERENCES:
patent: 6721146 (2004-04-01), Beach
patent: 6775903 (2004-08-01), Horng et al.
patent: 2002/0131218 (2002-09-01), Beach
patent: 2004/0047177 (2004-03-01), Fukuzumi
patent: 2004-103125 (2004-04-01), None
Masashige Sato, et al., “Spin-Valve-Like Properties of Ferromagnetic Tunnel Junctions”, Jpn. J. Appl. Phys., vol. 36, Feb. 15, 1997, pp. L200-L201.

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