Semiconductor memory and method of manufacturing the same

Details Semiconductor memory and method of manufacturing the same Semiconductor memory and method of manufacturing the same

2005-08-16

2005-08-16

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C438S241000, C438S243000

Reexamination Certificate

active

06930342

ABSTRACT:
According to the present invention, there is provided a semiconductor memory having a memory cell array region and peripheral circuit region, comprising, a gate electrode formed on a semiconductor substrate via a first insulating film in each of said memory cell array region and peripheral circuit region, and including a conductive layer which at least partially includes a silicon layer, and a second insulating film, a first oxide film formed on side surfaces of said conductive layer included in said gate electrode and on said semiconductor substrate in said memory cell array region, a second oxide film formed on side surfaces of said conductive layer included in said gate electrode and on said semiconductor substrate in said peripheral circuit region, and having a film thickness smaller than that of said first oxide film, a first nitride film formed on side surfaces of said gate electrode in said memory cell array region, and a second nitride film formed on side surfaces of said gate electrode in said peripheral circuit region, and having a film thickness larger than that of said first nitride film.

REFERENCES:
patent: 5021354 (1991-06-01), Pfiester
patent: 6235574 (2001-05-01), Tobben et al.
patent: 6248623 (2001-06-01), Chien et al.
patent: 6531350 (2003-03-01), Satoh et al.
patent: 2001-352046 (2001-12-01), None
patent: 2002-43549 (2002-02-01), None

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