Semiconductor structure having buried track conductors, and...

Details Semiconductor structure having buried track conductors, and... Semiconductor structure having buried track conductors, and...

2005-06-21

2005-06-21

Cao, Phat X. (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S391000

Reexamination Certificate

active

06909153

ABSTRACT:
A semiconductor structure300comprises a plurality of first track conductors303, a plurality of second track conductors304, which are insulated with respect to the first track conductors303and form a grid together with these first track conductors303, and a plurality of third track conductors307parallel above the first track conductors303, which third track conductors307partly cover the second track conductors304and are insulated with respect thereto, in which semiconductor structure300, between in each case two adjacent second track conductors304, there is located an electrical contact305between each first track conductor303and the corresponding third track conductor307which lies above it.

REFERENCES:
patent: 5149665 (1992-09-01), Lee
patent: 6114767 (2000-09-01), Nagai et al.
patent: 6545306 (2003-04-01), Kim et al.
patent: 6566699 (2003-05-01), Eitan
patent: 2002/0190292 (2002-12-01), Karasawa et al.

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