Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-06-14
2005-06-14
Booth, Richard A. (Department: 2812)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S344000, C438S300000
Reexamination Certificate
active
06906382
ABSTRACT:
A gate electrode is formed on a semiconductor substrate with a gate insulating film interposed therebetween, and a sidewall spacer is then formed at the lateral sides of the gate electrode on the semiconductor substrate. Epitaxial growth is conducted at a lower growth rate to form, at both lateral sides of the sidewall spacer on the semiconductor substrate, first semiconductor layers made of first single-crystal silicon films superior in crystallinity. Then, epitaxial growth is conducted at a higher growth rate to form, on the first semiconductor layers, second semiconductor layers made of single-crystal films or polycrystalline films, which are inferior in crystallinity, or amorphous films. The upper areas of the first semiconductor layers and the whole areas of the second semiconductor layers are doped with impurity, thus forming impurity diffusion layers respectively serving as a source and a drain.
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Booth Richard A.
Matsushita Electric - Industrial Co., Ltd.
Studebaker Donald R.
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