Semiconductor memory device having twin-cell units

Details Semiconductor memory device having twin-cell units Semiconductor memory device having twin-cell units

2005-06-07

2005-06-07

Le, Thong Q. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Capacitors

C365S102000

Reexamination Certificate

active

06903961

ABSTRACT:
Each of twin-cell units each formed of two DRAM cells has a cell plate electrically isolated from the cell plates in the other twin-cell units. Thereby, voltages on two storage nodes storing mutually complementary data in the same twin-cell unit change similarly to each other owing to capacitive coupling.

REFERENCES:
patent: 5363327 (1994-11-01), Henkles et al.
patent: 5381379 (1995-01-01), Fukumoto
patent: 5724293 (1998-03-01), Tomishima et al.
patent: 6573613 (2003-06-01), Arimoto et al.
patent: 04-44692 (1992-02-01), None
patent: 07-130172 (1995-05-01), None

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