Method of forming a rough (high surface area) electrode from...

Details Method of forming a rough (high surface area) electrode from... Method of forming a rough (high surface area) electrode from...

2005-06-07

2005-06-07

Zarabian, Amir (Department: 2822)

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

C438S396000, C438S255000, C438S653000

Reexamination Certificate

active

06902985

ABSTRACT:
A technique for forming a high surface area electrode or storage node for a capacitor and devices formed thereby, including depositing a first layer of conductive material on a substrate, such that a discontinuous layer is formed. A second conductive material layer is deposited over the discontinuous first conductive material layer, such that the second conductive material layer grows or accumulates on the discontinuous first conductive material layer at a faster rate than on the exposed areas of the substrate in the discontinuous first conductive material layer to form a rough conductive material layer.

REFERENCES:
patent: RE28635 (1975-12-01), Youtsey et al.
patent: 4438481 (1984-03-01), Phillips et al.
patent: 5005102 (1991-04-01), Larson
patent: 5061650 (1991-10-01), Dennison et al.
patent: 5087296 (1992-02-01), Kondo et al.
patent: 5112773 (1992-05-01), Tuttle
patent: 5182232 (1993-01-01), Chhabra et al.
patent: 5292677 (1994-03-01), Dennison
patent: 5326724 (1994-07-01), Wei
patent: 5338700 (1994-08-01), Dennison et al.
patent: 5340763 (1994-08-01), Dennison
patent: 5340765 (1994-08-01), Dennison et al.
patent: 5362666 (1994-11-01), Dennison
patent: 5418180 (1995-05-01), Brown
patent: 5444022 (1995-08-01), Gardner
patent: 5457063 (1995-10-01), Park
patent: 5459094 (1995-10-01), Jun
patent: 5466626 (1995-11-01), Armacost et al.
patent: 5491356 (1996-02-01), Dennison et al.
patent: 5494841 (1996-02-01), Dennison et al.
patent: 5508223 (1996-04-01), Tseng
patent: 5508542 (1996-04-01), Geiss et al.
patent: 5552334 (1996-09-01), Tseng
patent: 5589712 (1996-12-01), Kawashima et al.
patent: RE35420 (1997-01-01), Cathey et al.
patent: 5622888 (1997-04-01), Sekine et al.
patent: 5627102 (1997-05-01), Shinriki et al.
patent: 5654581 (1997-08-01), Radosevich et al.
patent: 5700710 (1997-12-01), Zenke
patent: 5705838 (1998-01-01), Jost et al.
patent: 5719083 (1998-02-01), Komatsu
patent: 5753948 (1998-05-01), Nguyen et al.
patent: 5760434 (1998-06-01), Zahurak et al.
patent: 5760474 (1998-06-01), Schuele
patent: 5811344 (1998-09-01), Tu et al.
patent: 5817554 (1998-10-01), Tseng
patent: 5847459 (1998-12-01), Taniguchi
patent: 5885882 (1999-03-01), Schugraf et al.
patent: 5946594 (1999-08-01), Iyer et al.
patent: 6033928 (2000-03-01), Eriguchi et al.
patent: 6069053 (2000-05-01), Ping et al.
patent: 6188097 (2001-02-01), Derderian et al.
patent: 6350648 (2002-02-01), Ping et al.
patent: 6399982 (2002-06-01), Derderian et al.
Handbook of Thin Film Technology, L.I. Maissel & R. Glang (McGraw-Hill 1970) [pp. 8-28, 8-31].
Silicon Processing for the VLSI Era: vol. 1—Process Technology, S. Wolf & R. N. Tauber (Lattice Press 1986) [pp. 110, 112, 114].
An Introduction to Thin Films, L.I. Maissel & M.H. Francombe (Gordon & Breach 1973) [pp. 80, 81].
Ruska, W.S.,“Microelectronic Processing, An Introduction to the Manufacture of Integrated Circuits,” (1987) pp. 278-279.

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