Semiconductor constructions

Details Semiconductor constructions Semiconductor constructions

2005-12-20

2005-12-20

Wille, Douglas (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S356000

Reexamination Certificate

active

06977421

ABSTRACT:
The invention includes a DRAM array having a structure therein which includes a first material separated from a second material by an intervening insulative material. The first material is doped to at least 1×1017atoms/cm3with n-type and p-type dopant. The invention also includes a semiconductor construction in which a doped material is over a segment of a substrate. The doped material has a first type majority dopant therein, and is electrically connected with an electrical ground. A pair of conductively-doped diffusion regions are adjacent the segment, and spaced from one another by at least a portion of the segment. The conductively-doped diffusion regions have a second type majority dopant therein. The invention also encompasses methods of forming semiconductor constructions.

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