Tri-gate devices and methods of fabrication

Details Tri-gate devices and methods of fabrication Tri-gate devices and methods of fabrication

2005-02-22

2005-02-22

Cao, Phat X. (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S157000, C438S283000

Reexamination Certificate

active

06858478

ABSTRACT:
The present invention is a semiconductor device comprising a semiconductor body having a top surface and laterally opposite sidewalls formed on a substrate. A gate dielectric layer is formed on the top surface of the semiconductor body and on the laterally opposite sidewalls of the semiconductor body. A gate electrode is formed on the gate dielectric on the top surface of the semiconductor body and adjacent to the gate dielectric on the laterally opposite sidewalls of the semiconductor body.

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