Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Flip chip
Reexamination Certificate
2005-08-30
2005-08-30
Cao, Phat X. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Flip chip
C257S737000, C438S108000
Reexamination Certificate
active
06936928
ABSTRACT:
The invention proposes a semiconductor component with a semiconductor chip having a first main side with at least one contact pad thereon. A protective layer is applied on the first main side such that a clearance is provided around the contact pad. It is possible for the semiconductor component to be connected to a substrate using flip-chip bonding. Elevations that are connected to contact pads via conductor runs located on the protective layer are provided on the first main side. The elevations may be produced either by printable materials or by repeated electrodepositing of the ends of the conductor tracks lying opposite the contact pads.
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Beine, H.: “Polymer-Flip-Chip-Technologie” [Polymer Flip-Chip Technology], Productronic, Aug. 1996, pp. 26-27.
Hedler Harry
Meyer Thorsten
Cao Phat X.
Greenberg Laurence A.
Locher Ralph E.
Stemer Werner H.
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