Method of forming a dual-layer resist and application thereof

Details Method of forming a dual-layer resist and application thereof Method of forming a dual-layer resist and application thereof

2005-06-21

2005-06-21

Sarkar, Asok Kumar (Department: 2829)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S638000, C438S639000, C438S761000, C438S948000, C438S949000

Reexamination Certificate

active

06908854

ABSTRACT:
A method of forming a dual-layer resist and application thereof. With respect to the method of forming a dual-layer resist, first, a patterned first resist layer is formed on a substrate. Next, the first resist layer is cured so that the first resist layer does not dissolve in a resist solvent. Finally, a patterned second resist layer is formed on the cured first resist layer. The method of forming a dual-layer resist can be applied to mask ROM coding, hole formation and a dual damascene structure.

REFERENCES:
patent: 6136723 (2000-10-01), Nagase
patent: 6242344 (2001-06-01), Koh et al.
patent: 6774043 (2004-08-01), Yamaguchi et al.

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